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| 2SK3579-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Ratings Unit 150 V 130 V Continuous drain current 23 A 96 Pulsed drain current A Gate-source voltage 20 V 23 Repetitive or non-repetitive A Maximum Avalanche Energy 242 mJ 20 Maximum Drain-Source dV/dt kV/s Peak Diode Recovery dV/dt 5 kV/s 2.1 Max. power dissipation W 40 +150 Operating and storage Tch C -55 to +150 temperature range Tstg C Isolation Voltage VISO *6 2 kVrms < < < < *1 L=0.67mH, Vcc=48V *2 Tch=150C *3 IF=-ID, -di/dt=50A/s, Vcc=BVDSS, Tch=150C *4 VDS< 250V = *5 VGS=-20V *6 t=60sec f=60Hz Item Drain-source voltage Symbol VDS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) Test Conditions ID=250A VGS=0V VDS=VGS ID= 250A Tch=25C VDS=150V VGS=0V Tch=125C VDS=120V VGS=0V VGS=20V VDS=0V ID=11.5A VGS=10V Min. 150 1.0 Typ. Max. 2.5 25 250 100 90 Units V V A nA m 10 65 Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Internal Resistance (Tep.Confficient) Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD Rg Rg/ch IAV VSD trr Qrr ID=11.5A VDS=75V VGS=0V f=1MHz VDS=25V 12 VCC=48V ID=11.5A VGS=10V RGS=10 VCC=48V ID=23A VGS=10V 23.3 L=100H Tch=25C IF=23A VGS=0V Tch=25C IF=23A VGS=0V -di/dt=100A/s Tch=25C 23 24 1470 2200 190 285 18 27 24 36 23 35 300 450 45 68 48 72 6 9 12 18 39 54.4 0.12 1.10 0.13 0.6 1.65 S pF ns nC %/C A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 3.125 58.0 Units C/W C/W 1 2SK3579-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET Typical Output Characteristics 55 50 45 40 35 4.0V 50 45 40 35 ID=f(VDS):80s Pulse test,Tch=25C 20V 10V 8V 5.0V 4.5V ID [A] 30 PD [W] 30 25 25 20 20 15 10 5 0 0 25 50 75 100 125 150 VGS=3.5V 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Tc [C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C 100 100 Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 10 10 ID[A] 1 gfs [S] 1 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.1 0.1 1 10 100 VGS[V] ID [A] Typical Drain-Source on-state Resistance 0.16 0.14 0.12 RDS(on)=f(ID):80s Pulse test, Tch=25C VGS= 3.5V 4.0V 0.20 0.18 0.16 0.14 4.5V 5V 8V 10V 20V Drain-Source On-state Resistance RDS(on)=f(Tch):ID=11.5A,VGS=10V RDS(on) [ ] RDS(on) [ ] 0.10 0.08 0.06 0.04 0.02 0.12 0.10 0.08 0.06 0.04 0.02 max. typ. 0.00 0 10 20 30 40 50 0.00 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [C] 2 2SK3579-01MR FUJI POWER MOSFET 4.0 3.5 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA Typical Gate Charge Characteristics 24 22 20 VGS=f(Qg):ID=23A, Tch=25C 3.0 18 max. VGS(th) [V] 16 14 Vcc= 48V 2.5 2.0 1.5 VGS [V] min. 12 10 8 1.0 0.5 6 4 2 0.0 -50 -25 0 25 50 75 100 125 150 0 0 10 20 30 40 50 60 70 80 90 100 Tch [C] Qg [nC] 10 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode 100 IF=f(VSD):80s Pulse test,Tch=25C 10 0 Ciss 10 VGS=10V VGS=0V C [nF] Coss 10 -1 IF [A] 1 10 -2 Crss -1 10 10 0 10 1 10 2 10 3 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 VDS [V] VSD [V] Typical Switching Characteristics vs. ID 10 3 t=f(ID):Vcc=48V, VGS=10V, RG=10 300 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=23A 250 tf 10 2 200 td(off) EAV [mJ] t [ns] td(on) tr 150 10 1 100 50 10 0 0 -1 10 10 0 10 1 10 2 0 25 50 75 100 125 150 ID [A] starting Tch [C] 3 2SK3579-01MR FUJI POWER MOSFET 80 70 60 50 Gate-Internal Resistance vs. Tch RG=f(Tch):f=1MHz,VDS=0V max. RG [ ] Typ. 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 min. Tch [C] Maximum Avalanche Current Pulsewidth 10 2 IAV=f(tAV):starting Tch=25C. Vcc=48V Avalanche current IAV [A] Single Pulse 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Transient Thermal impedance Zth(ch-c)=f(t) :D=0 Zth(ch-c) [K/W] 10 0 10 -1 10 -5 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t [s] 4 |
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